“100mm (4”) GaSb Substrates from Galaxy”
FastFPA Presentation - October 2009
| Specifications | Description | Tolerance |
|---|---|---|
| Orientation | <100> ; <111>; alternatives available |
Standard: ± 0.5° |
| Doping / Carrier Concentrations |
n-type: Tellurium undoped: p-type |
n-type: 1E15 - 4E18/cm3 |
| Diameter | Production:
up to 100 mm Development: 125 mm |
Standard: |
| Wafer Diameter | 75 mm |
100 mm |
|---|---|---|
| PV, front surface flatness |
< 5 μm |
< 5 μm |
| Total Thickness Variation |
< 5 μm |
< 10 μm |
| EPD / cm2 |
< 1000 |
< 1000 |
| Minor / Major flat lengths: EJ, SEMI- or Customer Spec | ||